IRGB5B120KDPBF Datasheet, International Rectifier

IRGB5B120KDPBF transistor equivalent, insulated gate bipolar transistor.

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Features and benefits

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA. www.DataSheet4U.com
* Ultrasoft Dio.

Application

f.com 9 IRGB5B120KDPbF L L 0 DUT 1K VCC 80 V Rg DUT 1000V www.DataSheet4U.com Fig.C.T.1 - Gate Charge Circuit .

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